IPD60N10S4L-12 Application and Selection Guide
IPD60N10S4L-12 Model and Manufacturer Information
IPD60N10S4L-12, a MOSFETs manufactured by Infineon: IPD60N10S4L-12 helps you confirm the specific model, while Infineon helps you confirm the product source. If you are selecting a part, you can first check whether IPD60N10S4L-12 meets your requirements, then check whether Infineon matches your expectations, and then refer to MOSFET N-Ch 100V 60A DPAK-2 for further evaluation.
IPD60N10S4L-12 Product Parameters and Description
The main parameters of Infineon's MOSFETs product IPD60N10S4L-12 include MOSFET N-Ch 100V 60A DPAK-2. This is a MOSFETs produced by Infineon, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.
IPD60N10S4L-12 Application and Selection Reference
Infineon's MOSFETs product IPD60N10S4L-12 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, IPD60N10S4L-12 is a MOSFETs solution worth considering, and manufacturer Infineon provides long-term supply program support for this product, which helps ensure supply continuity during mass production.
Recommended Part Numbers for IPD60N10S4L-12
Designers looking for IPD60N10S4L-12 recommended parts can evaluate the following options. IPD60N10S4L-12 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.
| Recommended Part |
Brand |
Package |
Description |
| IPD14N06S2-80 |
Infineon |
|
POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 55V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 |
| BUK7Y18-75B,115 |
Infineon |
|
BUK7Y18 Series 75 V 0.018 Ohm N-Channel TrenchMOS Standard Level FET - PowerSO-8 |
| BSP135H6906XTSA1 (BAND M) |
INFINEON |
|
null |
EZKEY can provide IPD60N10S4L-12 recommended part comparison data and engineering samples for evaluation.