What are the key features of Infineon IPD14N06S2-80?

This product belongs to the MOSFETs category and ships in standard packaging. It features high reliability, stable performance and low power consumption. Key parameters include wide operating range, low loss, and over-temperature protection, suitable for industrial applications. Manufactured by Infineon with full traceability.

What are the main application scenarios for IPD14N06S2-80?

Typical applications include power management, industrial control. Additionally, it is widely used in automotive electronics, telecom infrastructure, medical devices, and consumer electronics as a critical circuit component, improving system integration and energy efficiency.

How does IPD14N06S2-80 work?

This device follows established MOSFETs design principles. Core functional stages include input handling, signal and power processing, and protection logic, ensuring stable operation under varying conditions. Refer to the datasheet for the detailed characteristics and application guidance.

What is the technical performance of IPD14N06S2-80?

Performance highlights: stable characteristics across the operating temperature range, low loss, and long service life. Reliable contact and shock resistance, with protection against over-current and over-voltage where applicable. Meets industrial and automotive reliability standards where the series qualifies.

What is the current market demand for IPD14N06S2-80?

The global MOSFETs market is growing at ~6-8% CAGR, with particularly strong demand in power management. Infineon IPD14N06S2-80 is a mainstream model with stable stock and a typical lead time of 2-4 weeks. Driven by new energy and smart electronics trends, inquiries for this model are steadily increasing, indicating a positive long-term outlook.

What are the technical characteristics of IPD14N06S2-80?

Three main technical features: 1) High reliability – stable performance over the rated life; 2) Low-loss design – reduced energy loss in operation; 3) Wide adaptability – compatible with various operating conditions. Additionally, Infineon provides full technical support and reference designs.

IPD14N06S2-80 POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 55V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 by Infineon

IPD14N06S2-80 | Infineon POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 55V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252

Category: MOSFETs

Brand: Infineon

POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 55V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252

Stock: On request

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Product Details

PDF Datasheet

Technical Docs

Description: POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 55V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252

Technical Parameters

Application	Power Switching
Brand	Infineon
Data Tier	Family Level
Lead Free	Yes
Mounting Type	Surface Mount
Operating Temperature	-40 to +150 C
Packaging	Tape & Reel
Product Type	MOSFET
RoHS	Compliant
Series	IPD

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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3D Model (.stp)

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IPD14N06S2-80 Application and Selection Guide

IPD14N06S2-80 Model and Manufacturer Information

IPD14N06S2-80, a MOSFETs manufactured by Infineon: IPD14N06S2-80 helps you confirm the specific model, while Infineon helps you confirm the product source. If you are selecting a part, you can first check whether IPD14N06S2-80 meets your requirements, then check whether Infineon matches your expectations, and then refer to POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 55V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 for further evaluation.

IPD14N06S2-80 Product Parameters and Description

The main parameters of Infineon's MOSFETs product IPD14N06S2-80 include POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 55V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. This is a MOSFETs produced by Infineon, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

IPD14N06S2-80 Application and Selection Reference

Infineon's MOSFETs product IPD14N06S2-80 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, IPD14N06S2-80 is a MOSFETs solution worth considering, and manufacturer Infineon provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for IPD14N06S2-80

Designers looking for IPD14N06S2-80 recommended parts can evaluate the following options. IPD14N06S2-80 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
IRFB4115PB	Infineon	null
IPD90N04S4L-04	INFINEON	TRMOSFET.SMD.N.90A.40V.IPD90
BSP300H6327	Infineon	null

EZKEY can provide IPD14N06S2-80 recommended part comparison data and engineering samples for evaluation.