C3M0065090D  碳化硅MOSFET, 单, N通道, 36 A, 900 V, 0.065 ohm, TO by Cree Inc

C3M0065090D | Cree Inc 碳化硅MOSFET, 单, N通道, 36 A, 900 V, 0.065 ohm, TO

Category: SiC MOSFETs
Brand: Cree Inc
碳化硅MOSFET, 单, N通道, 36 A, 900 V, 0.065 ohm, TO
Stock: On request

Product Details

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Description: 碳化硅MOSFET, 单, N通道, 36 A, 900 V, 0.065 ohm, TO

Technical Parameters

ApplicationEV charging / solar / industrial
Data TierFamily Level
DrainSourceVoltage900 V
GateDrive+15 V (max +19/-5 V)
MountingThrough Hole
OperatingTemp-55°C to +150°C (Tj)
PackageTO-247 / through-hole
RdsOn~65 mΩ (typ)
SeriesWolfspeed C3M SiC MOSFET (gen 3)
TechnologySilicon Carbide (SiC)
TransistorTypeN-Channel Enhancement
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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