C2M0080120D  碳化硅MOSFET, 单, N通道, 31.6 A, 1.2 kV, 0.08 ohm, TO by Cree Inc

C2M0080120D | Cree Inc 碳化硅MOSFET, 单, N通道, 31.6 A, 1.2 kV, 0.08 ohm, TO

Category: SiC MOSFETs
Brand: Cree Inc
碳化硅MOSFET, 单, N通道, 31.6 A, 1.2 kV, 0.08 ohm, TO
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: 碳化硅MOSFET, 单, N通道, 31.6 A, 1.2 kV, 0.08 ohm, TO

Technical Parameters

ApplicationSolar inverter / EV charging / SMPS
Data TierFamily Level
DrainSourceVoltage1200 V
GateDrive+15 V (max ±20 V)
MountingThrough Hole
OperatingTemp-55°C to +150°C (Tj)
PackageTO-247 (3-pin through-hole)
RdsOn~80 mΩ (typ)
SeriesWolfspeed/Cree C2M SiC MOSFET
TechnologySilicon Carbide (SiC)
TransistorTypeN-Channel Enhancement
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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