C2M0080120D Application and Selection Guide
C2M0080120D Model and Manufacturer Information
C2M0080120D, a SiC MOSFETs manufactured by Cree Inc: C2M0080120D helps you confirm the specific model, while Cree Inc helps you confirm the product source. If you are selecting a part, you can first check whether C2M0080120D meets your requirements, then check whether Cree Inc matches your expectations, and then refer to 碳化硅MOSFET, 单, N通道, 31.6 A, 1.2 kV, 0.08 ohm, TO for further evaluation.
C2M0080120D Product Parameters and Description
The main parameters of Cree Inc's SiC MOSFETs product C2M0080120D include 碳化硅MOSFET, 单, N通道, 31.6 A, 1.2 kV, 0.08 ohm, TO. This is a SiC MOSFETs produced by Cree Inc, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.
C2M0080120D Application and Selection Reference
Cree Inc's SiC MOSFETs product C2M0080120D has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, C2M0080120D is a SiC MOSFETs solution worth considering, and manufacturer Cree Inc provides long-term supply program support for this product, which helps ensure supply continuity during mass production.
Recommended Part Numbers for C2M0080120D
Designers looking for C2M0080120D recommended parts can evaluate the following options. C2M0080120D selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.
| Recommended Part |
Brand |
Package |
Description |
| C3M0065090J |
Cree Inc |
|
碳化硅MOSFET, 单, N通道, 35 A, 900 V, 0.065 ohm, TO |
| C2M0040120D |
Cree Inc |
|
|
| C3M0065090D |
Cree Inc |
|
碳化硅MOSFET, 单, N通道, 36 A, 900 V, 0.065 ohm, TO |
EZKEY can provide C2M0080120D recommended part comparison data and engineering samples for evaluation.