What are the key features of Qorvo T1G4020036-FS?

This product belongs to the General Purpose category and ships in standard packaging. It features high reliability, stable performance and low power consumption. Key parameters include wide operating range, low loss, and over-temperature protection, suitable for industrial applications. Manufactured by Qorvo with full traceability.

What are the main application scenarios for T1G4020036-FS?

Typical applications include power management, industrial control. Additionally, it is widely used in automotive electronics, telecom infrastructure, medical devices, and consumer electronics as a critical circuit component, improving system integration and energy efficiency.

How does T1G4020036-FS work?

This device follows established General Purpose design principles. Core functional stages include input handling, signal and power processing, and protection logic, ensuring stable operation under varying conditions. Refer to the datasheet for the detailed characteristics and application guidance.

What is the technical performance of T1G4020036-FS?

Performance highlights: stable characteristics across the operating temperature range, low loss, and long service life. Reliable contact and shock resistance, with protection against over-current and over-voltage where applicable. Meets industrial and automotive reliability standards where the series qualifies.

What is the current market demand for T1G4020036-FS?

The global General Purpose market is growing at ~6-8% CAGR, with particularly strong demand in power management. Qorvo T1G4020036-FS is a mainstream model with stable stock and a typical lead time of 2-4 weeks. Driven by new energy and smart electronics trends, inquiries for this model are steadily increasing, indicating a positive long-term outlook.

What are the technical characteristics of T1G4020036-FS?

Three main technical features: 1) High reliability – stable performance over the rated life; 2) Low-loss design – reduced energy loss in operation; 3) Wide adaptability – compatible with various operating conditions. Additionally, Qorvo provides full technical support and reference designs.

T1G4020036-FS RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ANTIMONY, HALOGEN, PFOS, SVHC, TBBP-A FREE AND ROHS COMPLIANT PACKAGE-4 by Qorvo

T1G4020036-FS | Qorvo RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ANTIMONY, HALOGEN, PFOS, SVHC, TBBP-A FREE AND ROHS COMPLIANT PACKAGE-4

Category: General Purpose

Brand: Qorvo

RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ANTIMONY, HALOGEN, PFOS, SVHC, TBBP-A FREE AND ROHS COMPLIANT PACKAGE-4

Stock: On request

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Product Details

PDF Datasheet

Technical Docs

Description: RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ANTIMONY, HALOGEN, PFOS, SVHC, TBBP-A FREE AND ROHS COMPLIANT PACKAGE-4

Technical Parameters

Application	General Purpose
Brand	Qorvo
Data Tier	General Description
ECCN	EAR99
Halogen Free	Yes
Lead Free	Yes
Packaging	Tape & Reel
Product Type	Electronic Component
REACH	Compliant
RoHS	Compliant

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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3D Model (.stp)

Schematic Symbol (.sch)

DXF Drawing

T1G4020036-FS Application and Selection Guide

T1G4020036-FS Model and Manufacturer Information

T1G4020036-FS, a General Purpose manufactured by Qorvo: T1G4020036-FS helps you confirm the specific model, while Qorvo helps you confirm the product source. If you are selecting a part, you can first check whether T1G4020036-FS meets your requirements, then check whether Qorvo matches your expectations, and then refer to RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ANTIMONY, HALOGEN, PFOS, SVHC, TBBP-A FREE AND ROHS COMPLIANT PACKAGE-4 for further evaluation.

T1G4020036-FS Product Parameters and Description

The main parameters of Qorvo's General Purpose product T1G4020036-FS include RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ANTIMONY, HALOGEN, PFOS, SVHC, TBBP-A FREE AND ROHS COMPLIANT PACKAGE-4. This is a General Purpose produced by Qorvo, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

T1G4020036-FS Application and Selection Reference

Qorvo's General Purpose product T1G4020036-FS has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, T1G4020036-FS is a General Purpose solution worth considering, and manufacturer Qorvo provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for T1G4020036-FS

Designers looking for T1G4020036-FS recommended parts can evaluate the following options. T1G4020036-FS selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

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TQM879006ATR13	Qorvo	射频放大器 1.4-2.7GHz Gain 31.7 NF 1.5dB
QM13345TR13	Qorvo	RF Switch ICs ACS SP4T
RFFM4591FTR7	Qorvo	RF Front End 5GHz 3.3V and 4.2V 11ac FEM

EZKEY can provide T1G4020036-FS recommended part comparison data and engineering samples for evaluation.