SSM6N36FE,LM(B Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET by Toshiba Memory America, Inc.

SSM6N36FE,LM(B | Toshiba Memory America, Inc. Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Name: SSM6N36FE,LM(B
Brand: Toshiba Memory America, Inc.
SKU: SSM6N36FE,LM(B

Category: General Purpose

Brand: Toshiba Memory America, Inc.

Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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Product Details

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Description: Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Technical Parameters

Application	General Purpose
Brand	Toshiba Memory America, Inc.
Data Tier	General Description
ECCN	EAR99
Halogen Free	Yes
Lead Free	Yes
Packaging	Tape & Reel
Product Type	Electronic Component
REACH	Compliant
RoHS	Compliant

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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PCB Footprint (.pcb)

3D Model (.stp)

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SSM6N36FE,LM(B Application and Selection Guide

SSM6N36FE,LM(B Model and Manufacturer Information

SSM6N36FE,LM(B, a General Purpose manufactured by Toshiba Memory America, Inc.: SSM6N36FE,LM(B helps you confirm the specific model, while Toshiba Memory America, Inc. helps you confirm the product source. If you are selecting a part, you can first check whether SSM6N36FE,LM(B meets your requirements, then check whether Toshiba Memory America, Inc. matches your expectations, and then refer to Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET for further evaluation.

SSM6N36FE,LM(B Product Parameters and Description

The main parameters of Toshiba Memory America, Inc.'s General Purpose product SSM6N36FE,LM(B include Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. This is a General Purpose produced by Toshiba Memory America, Inc., and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

SSM6N36FE,LM(B Application and Selection Reference

Toshiba Memory America, Inc.'s General Purpose product SSM6N36FE,LM(B has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, SSM6N36FE,LM(B is a General Purpose solution worth considering, and manufacturer Toshiba Memory America, Inc. provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for SSM6N36FE,LM(B

Designers looking for SSM6N36FE,LM(B recommended parts can evaluate the following options. SSM6N36FE,LM(B selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
TC74VHCV17FT	Toshiba Memory America, Inc.	-
SSM6N15AFU,LF(T	Toshiba Memory America, Inc.	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TC7SB3157CFU.RSFT	Toshiba Memory America, Inc.	--

EZKEY can provide SSM6N36FE,LM(B recommended part comparison data and engineering samples for evaluation.