SSM6N15AFU,LF(T Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET by Toshiba Memory America, Inc.

SSM6N15AFU,LF(T | Toshiba Memory America, Inc. Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Name: SSM6N15AFU,LF(T
Brand: Toshiba Memory America, Inc.
SKU: SSM6N15AFU,LF(T

Category: General Purpose

Brand: Toshiba Memory America, Inc.

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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Product Details

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Description: Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Technical Parameters

Application	General Purpose
Brand	Toshiba Memory America, Inc.
Data Tier	General Description
ECCN	EAR99
Halogen Free	Yes
Lead Free	Yes
Packaging	Tape & Reel
Product Type	Electronic Component
REACH	Compliant
RoHS	Compliant

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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3D Model (.stp)

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SSM6N15AFU,LF(T Application and Selection Guide

SSM6N15AFU,LF(T Model and Manufacturer Information

SSM6N15AFU,LF(T, a General Purpose manufactured by Toshiba Memory America, Inc.: SSM6N15AFU,LF(T helps you confirm the specific model, while Toshiba Memory America, Inc. helps you confirm the product source. If you are selecting a part, you can first check whether SSM6N15AFU,LF(T meets your requirements, then check whether Toshiba Memory America, Inc. matches your expectations, and then refer to Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET for further evaluation.

SSM6N15AFU,LF(T Product Parameters and Description

The main parameters of Toshiba Memory America, Inc.'s General Purpose product SSM6N15AFU,LF(T include Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. This is a General Purpose produced by Toshiba Memory America, Inc., and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

SSM6N15AFU,LF(T Application and Selection Reference

Toshiba Memory America, Inc.'s General Purpose product SSM6N15AFU,LF(T has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, SSM6N15AFU,LF(T is a General Purpose solution worth considering, and manufacturer Toshiba Memory America, Inc. provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for SSM6N15AFU,LF(T

Designers looking for SSM6N15AFU,LF(T recommended parts can evaluate the following options. SSM6N15AFU,LF(T selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
TPC6110,LF(CM	Toshiba Memory America, Inc.	IC
TLX9291A(GBTPL,F(O	Toshiba Memory America, Inc.	Transistor Output Optocouplers
TMPA910CRAXBG	Toshiba Memory America, Inc.	RISC Microprocessor, 32-Bit, 200MHz, CMOS, PBGA361

EZKEY can provide SSM6N15AFU,LF(T recommended part comparison data and engineering samples for evaluation.