SSM6K809R,LF Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET by Toshiba Memory America, Inc.

SSM6K809R,LF | Toshiba Memory America, Inc. Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Name: SSM6K809R,LF
Brand: Toshiba Memory America, Inc.
SKU: SSM6K809R,LF

Category: General Purpose

Brand: Toshiba Memory America, Inc.

Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Stock: On request

Inquire Now

Product Details

PDF Datasheet

Technical Docs

Description: Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Technical Parameters

Application	General Purpose
Brand	Toshiba Memory America, Inc.
Data Tier	General Description
ECCN	EAR99
Halogen Free	Yes
Lead Free	Yes
Packaging	Tape & Reel
Product Type	Electronic Component
REACH	Compliant
RoHS	Compliant

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

Datasheet not available online yet.

Can't find the datasheet you need? Contact our sourcing team and we'll help locate the official documentation from the manufacturer or our supply channels.

Request now →

PCB Footprint (.pcb)

3D Model (.stp)

Schematic Symbol (.sch)

DXF Drawing

SSM6K809R,LF Application and Selection Guide

SSM6K809R,LF Model and Manufacturer Information

SSM6K809R,LF, a General Purpose manufactured by Toshiba Memory America, Inc.: SSM6K809R,LF helps you confirm the specific model, while Toshiba Memory America, Inc. helps you confirm the product source. If you are selecting a part, you can first check whether SSM6K809R,LF meets your requirements, then check whether Toshiba Memory America, Inc. matches your expectations, and then refer to Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET for further evaluation.

SSM6K809R,LF Product Parameters and Description

The main parameters of Toshiba Memory America, Inc.'s General Purpose product SSM6K809R,LF include Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. This is a General Purpose produced by Toshiba Memory America, Inc., and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

SSM6K809R,LF Application and Selection Reference

Toshiba Memory America, Inc.'s General Purpose product SSM6K809R,LF has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, SSM6K809R,LF is a General Purpose solution worth considering, and manufacturer Toshiba Memory America, Inc. provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for SSM6K809R,LF

Designers looking for SSM6K809R,LF recommended parts can evaluate the following options. SSM6K809R,LF selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
TH58NVG4S0HTA20	Toshiba Memory America, Inc.	IC FLASH 16G PARALLEL 48TSOP I
TC74HC4066AF(F)	Toshiba Memory America, Inc.	IC, 74 series logic
TC7W66FK(F)	Toshiba Memory America, Inc.	--

EZKEY can provide SSM6K809R,LF recommended part comparison data and engineering samples for evaluation.