SQ2361AEES-T1-GE3 Application and Selection Guide
SQ2361AEES-T1-GE3 Model and Manufacturer Information
SQ2361AEES-T1-GE3, a MOSFETs manufactured by Vishay Intertechnologies: SQ2361AEES-T1-GE3 helps you confirm the specific model, while Vishay Intertechnologies helps you confirm the product source. If you are selecting a part, you can first check whether SQ2361AEES-T1-GE3 meets your requirements, then check whether Vishay Intertechnologies matches your expectations, and then refer to Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 for further evaluation.
SQ2361AEES-T1-GE3 Product Parameters and Description
The main parameters of Vishay Intertechnologies's MOSFETs product SQ2361AEES-T1-GE3 include Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3. This is a MOSFETs produced by Vishay Intertechnologies, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.
SQ2361AEES-T1-GE3 Application and Selection Reference
Vishay Intertechnologies's MOSFETs product SQ2361AEES-T1-GE3 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, SQ2361AEES-T1-GE3 is a MOSFETs solution worth considering, and manufacturer Vishay Intertechnologies provides long-term supply program support for this product, which helps ensure supply continuity during mass production.
Recommended Part Numbers for SQ2361AEES-T1-GE3
Designers looking for SQ2361AEES-T1-GE3 recommended parts can evaluate the following options. SQ2361AEES-T1-GE3 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.
| Recommended Part |
Brand |
Package |
Description |
| SI9948AEY-T1-E3 |
Vishay Intertechnologies |
|
Transistor Polarity:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.6A, On Resistance Rds(on):0.14ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V |
| SIJH800E-T1-GE3 |
Vishay Intertechnologies |
|
T1 |
| SQ2319ADS-T1_BE3 |
Vishay Intertechnologies |
|
Power Field-Effect Transistor, |
EZKEY can provide SQ2361AEES-T1-GE3 recommended part comparison data and engineering samples for evaluation.