SI8499DB-T2-E1 Application and Selection Guide
SI8499DB-T2-E1 Model and Manufacturer Information
SI8499DB-T2-E1, a MOSFETs manufactured by Vishay Dale: SI8499DB-T2-E1 helps you confirm the specific model, while Vishay Dale helps you confirm the product source. If you are selecting a part, you can first check whether SI8499DB-T2-E1 meets your requirements, then check whether Vishay Dale matches your expectations, and then refer to MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1 for further evaluation.
SI8499DB-T2-E1 Product Parameters and Description
The main parameters of Vishay Dale's MOSFETs product SI8499DB-T2-E1 include MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1. This is a MOSFETs produced by Vishay Dale, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.
SI8499DB-T2-E1 Application and Selection Reference
Vishay Dale's MOSFETs product SI8499DB-T2-E1 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, SI8499DB-T2-E1 is a MOSFETs solution worth considering, and manufacturer Vishay Dale provides long-term supply program support for this product, which helps ensure supply continuity during mass production.
Recommended Part Numbers for SI8499DB-T2-E1
Designers looking for SI8499DB-T2-E1 recommended parts can evaluate the following options. SI8499DB-T2-E1 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.
| Recommended Part |
Brand |
Package |
Description |
| SI2306BDS-T1-E3 |
Vishay Dale |
|
表面贴装型 N 通道 30 V 3.16A(Ta) 750mW(Ta) SOT-23-3(TO-236) |
| 2N7002K-T1-GE3 |
Vishay Dale |
|
类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):300mA 功率(Pd):350mW |
| SI7430DP-T1-E3 |
Vishay Dale |
|
|
EZKEY can provide SI8499DB-T2-E1 recommended part comparison data and engineering samples for evaluation.