SI7119DN-T1-GE3 Application and Selection Guide
SI7119DN-T1-GE3 Model and Manufacturer Information
SI7119DN-T1-GE3, a MOSFETs manufactured by Vishay Dale: SI7119DN-T1-GE3 helps you confirm the specific model, while Vishay Dale helps you confirm the product source. If you are selecting a part, you can first check whether SI7119DN-T1-GE3 meets your requirements, then check whether Vishay Dale matches your expectations, and then refer to 表面贴装型 P 通道 200 V 3.8A(Tc) 3.7W(Ta),52W(Tc) PowerPAK® 1212-8 for further evaluation.
SI7119DN-T1-GE3 Product Parameters and Description
The main parameters of Vishay Dale's MOSFETs product SI7119DN-T1-GE3 include 表面贴装型 P 通道 200 V 3.8A(Tc) 3.7W(Ta),52W(Tc) PowerPAK® 1212-8. This is a MOSFETs produced by Vishay Dale, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.
SI7119DN-T1-GE3 Application and Selection Reference
Vishay Dale's MOSFETs product SI7119DN-T1-GE3 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, SI7119DN-T1-GE3 is a MOSFETs solution worth considering, and manufacturer Vishay Dale provides long-term supply program support for this product, which helps ensure supply continuity during mass production.
Recommended Part Numbers for SI7119DN-T1-GE3
Designers looking for SI7119DN-T1-GE3 recommended parts can evaluate the following options. SI7119DN-T1-GE3 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.
| Recommended Part |
Brand |
Package |
Description |
| SI7469DP-T1-E3 |
Vishay Dale |
|
T1 |
| SI9948AEY |
Vishay Dale |
|
MOSFET Transistor, Matched Pair, P-Channel, SO |
| SI9407BDY-T1-GE3 |
Vishay Dale |
|
MOS管 P-Channel VDS=60V VGS=±20V ID=3.2A RDS(ON)=120mΩ@10V SOIC8_150MIL |
EZKEY can provide SI7119DN-T1-GE3 recommended part comparison data and engineering samples for evaluation.