What are the key features of VISHAY SI2312BDS-T1-GE3?

This product belongs to the MOSFETs category and ships in standard packaging. It features high reliability, stable performance and low power consumption. Key parameters include wide operating range, low loss, and over-temperature protection, suitable for industrial applications. Manufactured by VISHAY with full traceability.

What are the main application scenarios for SI2312BDS-T1-GE3?

Typical applications include power management, industrial control. Additionally, it is widely used in automotive electronics, telecom infrastructure, medical devices, and consumer electronics as a critical circuit component, improving system integration and energy efficiency.

How does SI2312BDS-T1-GE3 work?

This device follows established MOSFETs design principles. Core functional stages include input handling, signal and power processing, and protection logic, ensuring stable operation under varying conditions. Refer to the datasheet for the detailed characteristics and application guidance.

What is the technical performance of SI2312BDS-T1-GE3?

Performance highlights: stable characteristics across the operating temperature range, low loss, and long service life. Reliable contact and shock resistance, with protection against over-current and over-voltage where applicable. Meets industrial and automotive reliability standards where the series qualifies.

What is the current market demand for SI2312BDS-T1-GE3?

The global MOSFETs market is growing at ~6-8% CAGR, with particularly strong demand in power management. VISHAY SI2312BDS-T1-GE3 is a mainstream model with stable stock and a typical lead time of 2-4 weeks. Driven by new energy and smart electronics trends, inquiries for this model are steadily increasing, indicating a positive long-term outlook.

What are the technical characteristics of SI2312BDS-T1-GE3?

Three main technical features: 1) High reliability – stable performance over the rated life; 2) Low-loss design – reduced energy loss in operation; 3) Wide adaptability – compatible with various operating conditions. Additionally, VISHAY provides full technical support and reference designs.

SI2312BDS-T1-GE3 TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal by VISHAY

SI2312BDS-T1-GE3 | VISHAY TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal

Name: SI2312BDS-T1-GE3
Brand: VISHAY
SKU: SI2312BDS-T1-GE3
Price: 0.03 USD
Availability: InStock

Category: MOSFETs

Brand: VISHAY

TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal

Quantity: 100 pcs

Unit Price: USD 0.03

Inquire Now

Product Details

PDF Datasheet

Technical Docs

Description: TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal

Technical Parameters

Application	Power Switching
Brand	VISHAY
Channel	N-Channel
Data Tier	Family Level
Mounting Type	Surface Mount
Operating Temperature	-55 to +150 C
Packaging	Tape & Reel
Product Type	MOSFET
RoHS	Compliant
Series	SI2

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

Datasheet not available online yet.

Can't find the datasheet you need? Contact our sourcing team and we'll help locate the official documentation from the manufacturer or our supply channels.

Request now →

PCB Footprint (.pcb)

3D Model (.stp)

Schematic Symbol (.sch)

DXF Drawing

SI2312BDS-T1-GE3 Application and Selection Guide

SI2312BDS-T1-GE3 Model and Manufacturer Information

SI2312BDS-T1-GE3, a MOSFETs manufactured by VISHAY: SI2312BDS-T1-GE3 helps you confirm the specific model, while VISHAY helps you confirm the product source. If you are selecting a part, you can first check whether SI2312BDS-T1-GE3 meets your requirements, then check whether VISHAY matches your expectations, and then refer to TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal for further evaluation.

SI2312BDS-T1-GE3 Product Parameters and Description

The main parameters of VISHAY's MOSFETs product SI2312BDS-T1-GE3 include TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal. This is a MOSFETs produced by VISHAY, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

SI2312BDS-T1-GE3 Application and Selection Reference

VISHAY's MOSFETs product SI2312BDS-T1-GE3 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, SI2312BDS-T1-GE3 is a MOSFETs solution worth considering, and manufacturer VISHAY provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for SI2312BDS-T1-GE3

Designers looking for SI2312BDS-T1-GE3 recommended parts can evaluate the following options. SI2312BDS-T1-GE3 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
SIP32416DNP-T1-GE4	Vishay	电源开关 IC - 配电 2A Dual Slew Rate Ctrl Load Switch
SQ2351CES-T1_GE3	VISHAY	MOSFETs P-CHANNEL 20-V (D-S) 175C MOSFET
SI2319DS-T1-BE3	Vishay	P-CHANNEL 40-V (D-S) MOSFET

EZKEY can provide SI2312BDS-T1-GE3 recommended part comparison data and engineering samples for evaluation.