What are the key features of STMicroelectronics SCT025W120G3-4AG?

This product belongs to the SiC MOSFETs category and ships in standard packaging. It features high reliability, stable performance and low power consumption. Key parameters include wide operating range, low loss, and over-temperature protection, suitable for industrial applications. Manufactured by STMicroelectronics with full traceability.

What are the main application scenarios for SCT025W120G3-4AG?

Typical applications include power management, industrial control. Additionally, it is widely used in automotive electronics, telecom infrastructure, medical devices, and consumer electronics as a critical circuit component, improving system integration and energy efficiency.

How does SCT025W120G3-4AG work?

This device follows established SiC MOSFETs design principles. Core functional stages include input handling, signal and power processing, and protection logic, ensuring stable operation under varying conditions. Refer to the datasheet for the detailed characteristics and application guidance.

What is the technical performance of SCT025W120G3-4AG?

Performance highlights: stable characteristics across the operating temperature range, low loss, and long service life. Reliable contact and shock resistance, with protection against over-current and over-voltage where applicable. Meets industrial and automotive reliability standards where the series qualifies.

What is the current market demand for SCT025W120G3-4AG?

The global SiC MOSFETs market is growing at ~6-8% CAGR, with particularly strong demand in power management. STMicroelectronics SCT025W120G3-4AG is a mainstream model with stable stock and a typical lead time of 2-4 weeks. Driven by new energy and smart electronics trends, inquiries for this model are steadily increasing, indicating a positive long-term outlook.

What are the technical characteristics of SCT025W120G3-4AG?

Three main technical features: 1) High reliability – stable performance over the rated life; 2) Low-loss design – reduced energy loss in operation; 3) Wide adaptability – compatible with various operating conditions. Additionally, STMicroelectronics provides full technical support and reference designs.

SCT025W120G3-4AG SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package by STMicroelectronics

SCT025W120G3-4AG | STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Category: SiC MOSFETs

Brand: STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Stock: On request

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Description: SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Technical Parameters

Application	General Purpose
Brand	STMicroelectronics
Category	SiC MOSFETs
Data Tier	General Description
Description	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Lead Free	Yes
Manufacturer	STMicroelectronics
Mounting Type	Surface Mount
Operating Temperature	-40 to +125 C
Packaging	Tape & Reel
Product Type	Semiconductor Component
RoHS	Compliant
Series	ST
Standard Pack Qty	600

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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SCT025W120G3-4AG Application and Selection Guide

SCT025W120G3-4AG Model and Manufacturer Information

SCT025W120G3-4AG, a SiC MOSFETs manufactured by STMicroelectronics: SCT025W120G3-4AG helps you confirm the specific model, while STMicroelectronics helps you confirm the product source. If you are selecting a part, you can first check whether SCT025W120G3-4AG meets your requirements, then check whether STMicroelectronics matches your expectations, and then refer to SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package for further evaluation.

SCT025W120G3-4AG Product Parameters and Description

The main parameters of STMicroelectronics's SiC MOSFETs product SCT025W120G3-4AG include SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package. This is a SiC MOSFETs produced by STMicroelectronics, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

SCT025W120G3-4AG Application and Selection Reference

STMicroelectronics's SiC MOSFETs product SCT025W120G3-4AG has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, SCT025W120G3-4AG is a SiC MOSFETs solution worth considering, and manufacturer STMicroelectronics provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for SCT025W120G3-4AG

Designers looking for SCT025W120G3-4AG recommended parts can evaluate the following options. SCT025W120G3-4AG selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

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EZKEY can provide SCT025W120G3-4AG recommended part comparison data and engineering samples for evaluation.