PUMD13,115 晶体管类型:1个NPN,1个PNP-预偏置 功率(Pd):300mW 集电极电流(Ic):100mA 集射极击穿电压(Vceo):50V by NXP Semiconductors

PUMD13,115 | NXP Semiconductors 晶体管类型:1个NPN,1个PNP-预偏置 功率(Pd):300mW 集电极电流(Ic):100mA 集射极击穿电压(Vceo):50V

Category: General Purpose
Brand: NXP Semiconductors
晶体管类型:1个NPN,1个PNP-预偏置 功率(Pd):300mW 集电极电流(Ic):100mA 集射极击穿电压(Vceo):50V
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: 晶体管类型:1个NPN,1个PNP-预偏置 功率(Pd):300mW 集电极电流(Ic):100mA 集射极击穿电压(Vceo):50V

Technical Parameters

ApplicationGeneral Purpose
BrandNexperia USA Inc.
Data TierGeneral Description
ECCNEAR99
Halogen FreeYes
Lead FreeYes
PackagingTape & Reel
Product TypeElectronic Component
REACHCompliant
RoHSCompliant
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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