MMBT3904WT1G 晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):150mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@50mA,5mA by Nexperia

MMBT3904WT1G | Nexperia 晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):150mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@50mA,5mA

Brand: Nexperia
晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):150mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@50mA,5mA
Quantity: 111,000 pcs
Unit Price: USD 0.02
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Description: 晶体管类型:NPN 集射极击穿电压(Vceo):40V 集电极电流(Ic):200mA 功率(Pd):150mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@50mA,5mA

Technical Parameters

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