MGFC36V4450A-51 RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN by Mitsubishi Electric

MGFC36V4450A-51 | Mitsubishi Electric RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN

Name: MGFC36V4450A-51
Brand: Mitsubishi Electric
SKU: MGFC36V4450A-51

Category: General Purpose

Brand: Mitsubishi Electric

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN

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Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN

Technical Parameters

Application	General Purpose
Brand	Mitsubishi Electric
Data Tier	General Description
ECCN	EAR99
Halogen Free	Yes
Lead Free	Yes
Packaging	Tape & Reel
Product Type	Electronic Component
REACH	Compliant
RoHS	Compliant

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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MGFC36V4450A-51 Application and Selection Guide

MGFC36V4450A-51 Model and Manufacturer Information

MGFC36V4450A-51, a General Purpose manufactured by Mitsubishi Electric: MGFC36V4450A-51 helps you confirm the specific model, while Mitsubishi Electric helps you confirm the product source. If you are selecting a part, you can first check whether MGFC36V4450A-51 meets your requirements, then check whether Mitsubishi Electric matches your expectations, and then refer to RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN for further evaluation.

MGFC36V4450A-51 Product Parameters and Description

The main parameters of Mitsubishi Electric's General Purpose product MGFC36V4450A-51 include RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN. This is a General Purpose produced by Mitsubishi Electric, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

MGFC36V4450A-51 Application and Selection Reference

Mitsubishi Electric's General Purpose product MGFC36V4450A-51 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, MGFC36V4450A-51 is a General Purpose solution worth considering, and manufacturer Mitsubishi Electric provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for MGFC36V4450A-51

Designers looking for MGFC36V4450A-51 recommended parts can evaluate the following options. MGFC36V4450A-51 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
MM3855AJ1RRE	Mitsubishi Electric	Other power management ICs
RA60H3340M1A-501	Mitsubishi Electric	RA60H3340M1A-501
M54583FP-DB1J	Mitsubishi Electric	--

EZKEY can provide MGFC36V4450A-51 recommended part comparison data and engineering samples for evaluation.