MGF4921AM The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in L to C band amplifiers. by Mitsubishi Electric

MGF4921AM | Mitsubishi Electric The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.

Name: MGF4921AM
Brand: Mitsubishi Electric
SKU: MGF4921AM

Category: General Purpose

Brand: Mitsubishi Electric

The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.

Stock: On request

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Product Details

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Description: The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.

Technical Parameters

Application	General Purpose
Brand	Mitsubishi Electric
Data Tier	General Description
ECCN	EAR99
Halogen Free	Yes
Lead Free	Yes
Packaging	Tape & Reel
Product Type	Electronic Component
REACH	Compliant
RoHS	Compliant

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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3D Model (.stp)

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MGF4921AM Application and Selection Guide

MGF4921AM Model and Manufacturer Information

MGF4921AM, a General Purpose manufactured by Mitsubishi Electric: MGF4921AM helps you confirm the specific model, while Mitsubishi Electric helps you confirm the product source. If you are selecting a part, you can first check whether MGF4921AM meets your requirements, then check whether Mitsubishi Electric matches your expectations, and then refer to The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. for further evaluation.

MGF4921AM Product Parameters and Description

The main parameters of Mitsubishi Electric's General Purpose product MGF4921AM include The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.. This is a General Purpose produced by Mitsubishi Electric, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

MGF4921AM Application and Selection Reference

Mitsubishi Electric's General Purpose product MGF4921AM has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, MGF4921AM is a General Purpose solution worth considering, and manufacturer Mitsubishi Electric provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for MGF4921AM

Designers looking for MGF4921AM recommended parts can evaluate the following options. MGF4921AM selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
CM600DY-24T#301G	Mitsubishi Electric	General electronic component
CM150DY-24T	Mitsubishi Electric	General electronic component
M5218	Mitsubishi Electric	-

EZKEY can provide MGF4921AM recommended part comparison data and engineering samples for evaluation.