IPD082N10N3GBTMA1 MOSFET N-CH 100V 80A TO252-3 by Infineon Technologies

IPD082N10N3GBTMA1 | Infineon Technologies MOSFET N-CH 100V 80A TO252-3

Name: IPD082N10N3GBTMA1
Brand: Infineon Technologies
SKU: IPD082N10N3GBTMA1

Category: MOSFETs

Brand: Infineon Technologies

MOSFET N-CH 100V 80A TO252-3

Stock: On request

Inquire Now

Product Details

PDF Datasheet

Technical Docs

Description: MOSFET N-CH 100V 80A TO252-3

Technical Parameters

Application	Power Switching
Brand	Infineon Technologies
Data Tier	Family Level
Lead Free	Yes
Mounting Type	Surface Mount
Operating Temperature	-40 to +150 C
Packaging	Tape & Reel
Product Type	MOSFET
RoHS	Compliant
Series	IPD

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

No datasheet available yet. Submit an inquiry and we'll provide it within 30 minutes.

PCB Footprint (.pcb)

3D Model (.stp)

Schematic Symbol (.sch)

DXF Drawing

IPD082N10N3GBTMA1 Application and Selection Guide

IPD082N10N3GBTMA1 Model and Manufacturer Information

IPD082N10N3GBTMA1, a MOSFETs manufactured by Infineon Technologies: IPD082N10N3GBTMA1 helps you confirm the specific model, while Infineon Technologies helps you confirm the product source. If you are selecting a part, you can first check whether IPD082N10N3GBTMA1 meets your requirements, then check whether Infineon Technologies matches your expectations, and then refer to MOSFET N-CH 100V 80A TO252-3 for further evaluation.

IPD082N10N3GBTMA1 Product Parameters and Description

The main parameters of Infineon Technologies's MOSFETs product IPD082N10N3GBTMA1 include MOSFET N-CH 100V 80A TO252-3. This is a MOSFETs produced by Infineon Technologies, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

IPD082N10N3GBTMA1 Application and Selection Reference

Infineon Technologies's MOSFETs product IPD082N10N3GBTMA1 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, IPD082N10N3GBTMA1 is a MOSFETs solution worth considering, and manufacturer Infineon Technologies provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for IPD082N10N3GBTMA1

Designers looking for IPD082N10N3GBTMA1 recommended parts can evaluate the following options. IPD082N10N3GBTMA1 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
BSC042N03LSG	Infineon Technologies	Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
IPB95R130PFD7	Infineon Technologies
IPD60R1K5CE	Infineon Technologies	Power Field-Effect Transistor, 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2

EZKEY can provide IPD082N10N3GBTMA1 recommended part comparison data and engineering samples for evaluation.