IPD60R1K5CE Power Field-Effect Transistor, 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 by Infineon Technologies

IPD60R1K5CE | Infineon Technologies Power Field-Effect Transistor, 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2

Name: IPD60R1K5CE
Brand: Infineon Technologies
SKU: IPD60R1K5CE

Category: MOSFETs

Brand: Infineon Technologies

Power Field-Effect Transistor, 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2

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Product Details

PDF Datasheet

Technical Docs

Description: Power Field-Effect Transistor, 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2

Technical Parameters

Application	Power Switching
Brand	Infineon Technologies
Data Tier	Family Level
Lead Free	Yes
Mounting Type	Surface Mount
Operating Temperature	-40 to +150 C
Packaging	Tape & Reel
Product Type	MOSFET
RoHS	Compliant
Series	IPD

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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PCB Footprint (.pcb)

3D Model (.stp)

Schematic Symbol (.sch)

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IPD60R1K5CE Application and Selection Guide

IPD60R1K5CE Model and Manufacturer Information

IPD60R1K5CE, a MOSFETs manufactured by Infineon Technologies: IPD60R1K5CE helps you confirm the specific model, while Infineon Technologies helps you confirm the product source. If you are selecting a part, you can first check whether IPD60R1K5CE meets your requirements, then check whether Infineon Technologies matches your expectations, and then refer to Power Field-Effect Transistor, 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 for further evaluation.

IPD60R1K5CE Product Parameters and Description

The main parameters of Infineon Technologies's MOSFETs product IPD60R1K5CE include Power Field-Effect Transistor, 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2. This is a MOSFETs produced by Infineon Technologies, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

IPD60R1K5CE Application and Selection Reference

Infineon Technologies's MOSFETs product IPD60R1K5CE has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, IPD60R1K5CE is a MOSFETs solution worth considering, and manufacturer Infineon Technologies provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for IPD60R1K5CE

Designers looking for IPD60R1K5CE recommended parts can evaluate the following options. IPD60R1K5CE selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
IPD100N06S403ATMA2	Infineon Technologies	MOSFET N-CH 60V 100A TO252-3-11
AUIRLR024NTRL	Infineon Technologies	MOSFET N-CH 55V 17A DPAK
IPD30N03S2L-10	Infineon Technologies	MOSFET N-CH 30V 30A TO252-3

EZKEY can provide IPD60R1K5CE recommended part comparison data and engineering samples for evaluation.