What are the key features of Infineon Technologies AG IMCQ120R004M2HXUMA1?

This product belongs to the SiC MOSFETs category and ships in standard packaging. It features high reliability, stable performance and low power consumption. Key parameters include wide operating range, low loss, and over-temperature protection, suitable for industrial applications. Manufactured by Infineon Technologies AG with full traceability.

What are the main application scenarios for IMCQ120R004M2HXUMA1?

Typical applications include power management, industrial control. Additionally, it is widely used in automotive electronics, telecom infrastructure, medical devices, and consumer electronics as a critical circuit component, improving system integration and energy efficiency.

How does IMCQ120R004M2HXUMA1 work?

This device follows established SiC MOSFETs design principles. Core functional stages include input handling, signal and power processing, and protection logic, ensuring stable operation under varying conditions. Refer to the datasheet for the detailed characteristics and application guidance.

What is the technical performance of IMCQ120R004M2HXUMA1?

Performance highlights: stable characteristics across the operating temperature range, low loss, and long service life. Reliable contact and shock resistance, with protection against over-current and over-voltage where applicable. Meets industrial and automotive reliability standards where the series qualifies.

What is the current market demand for IMCQ120R004M2HXUMA1?

The global SiC MOSFETs market is growing at ~6-8% CAGR, with particularly strong demand in power management. Infineon Technologies AG IMCQ120R004M2HXUMA1 is a mainstream model with stable stock and a typical lead time of 2-4 weeks. Driven by new energy and smart electronics trends, inquiries for this model are steadily increasing, indicating a positive long-term outlook.

What are the technical characteristics of IMCQ120R004M2HXUMA1?

Three main technical features: 1) High reliability – stable performance over the rated life; 2) Low-loss design – reduced energy loss in operation; 3) Wide adaptability – compatible with various operating conditions. Additionally, Infineon Technologies AG provides full technical support and reference designs.

IMCQ120R004M2HXUMA1 SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package by Infineon Technologies AG

IMCQ120R004M2HXUMA1 | Infineon Technologies AG SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Category: SiC MOSFETs

Brand: Infineon Technologies AG

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Stock: On request

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Product Details

PDF Datasheet

Technical Docs

Description: SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Technical Parameters

Application	General Purpose
Brand	Infineon Technologies AG
Category	SiC MOSFETs
Data Tier	General Description
Description	SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Lead Free	Yes
Manufacturer	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-40 to +150 C
Packaging	Reel
Product Type	Semiconductor Component
RoHS	Compliant
Series	Infineon
Standard Pack Qty	750

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

📄 IMCQ120R004M2HXUMA1 Datasheet (PDF)

Source: https://cn.mouser.com/en/ProductDetail/Infineon-Technologies/IMCQ120R004M2HXUMA1?qs=PBDs2xEllI8EOpIE9n144A%3D%3D

PCB Footprint (.pcb)

3D Model (.stp)

Schematic Symbol (.sch)

DXF Drawing

IMCQ120R004M2HXUMA1 Application and Selection Guide

IMCQ120R004M2HXUMA1 Model and Manufacturer Information

IMCQ120R004M2HXUMA1, a SiC MOSFETs manufactured by Infineon Technologies AG: IMCQ120R004M2HXUMA1 helps you confirm the specific model, while Infineon Technologies AG helps you confirm the product source. If you are selecting a part, you can first check whether IMCQ120R004M2HXUMA1 meets your requirements, then check whether Infineon Technologies AG matches your expectations, and then refer to SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package for further evaluation.

IMCQ120R004M2HXUMA1 Product Parameters and Description

The main parameters of Infineon Technologies AG's SiC MOSFETs product IMCQ120R004M2HXUMA1 include SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package. This is a SiC MOSFETs produced by Infineon Technologies AG, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

IMCQ120R004M2HXUMA1 Application and Selection Reference

Infineon Technologies AG's SiC MOSFETs product IMCQ120R004M2HXUMA1 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, IMCQ120R004M2HXUMA1 is a SiC MOSFETs solution worth considering, and manufacturer Infineon Technologies AG provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

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EZKEY can provide IMCQ120R004M2HXUMA1 recommended part comparison data and engineering samples for evaluation.