C3M0045065K Power Field-Effect Transistor, 49A I(D), 650V, 0.06ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, 4 PIN by Cree

C3M0045065K | Cree Power Field-Effect Transistor, 49A I(D), 650V, 0.06ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, 4 PIN

Name: C3M0045065K
Brand: Cree
SKU: C3M0045065K

Category: SiC MOSFETs

Brand: Cree

Power Field-Effect Transistor, 49A I(D), 650V, 0.06ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, 4 PIN

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Description: Power Field-Effect Transistor, 49A I(D), 650V, 0.06ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, 4 PIN

Technical Parameters

Application	EV charging / solar / industrial
Data Tier	Family Level
DrainSourceVoltage	650 V
GateDrive	+15 V (max +19/-5 V)
Mounting	Through Hole
OperatingTemp	-55°C to +150°C (Tj)
Package	TO-247 / through-hole
RdsOn	~45 mΩ (typ)
Series	Wolfspeed C3M SiC MOSFET (gen 3)
Technology	Silicon Carbide (SiC)
TransistorType	N-Channel Enhancement

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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C3M0045065K Application and Selection Guide

C3M0045065K Model and Manufacturer Information

C3M0045065K, a SiC MOSFETs manufactured by Cree: C3M0045065K helps you confirm the specific model, while Cree helps you confirm the product source. If you are selecting a part, you can first check whether C3M0045065K meets your requirements, then check whether Cree matches your expectations, and then refer to Power Field-Effect Transistor, 49A I(D), 650V, 0.06ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, 4 PIN for further evaluation.

C3M0045065K Product Parameters and Description

The main parameters of Cree's SiC MOSFETs product C3M0045065K include Power Field-Effect Transistor, 49A I(D), 650V, 0.06ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, 4 PIN. This is a SiC MOSFETs produced by Cree, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

C3M0045065K Application and Selection Reference

Cree's SiC MOSFETs product C3M0045065K has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, C3M0045065K is a SiC MOSFETs solution worth considering, and manufacturer Cree provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for C3M0045065K

Designers looking for C3M0045065K recommended parts can evaluate the following options. C3M0045065K selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
C3M0040120K	Cree	MOSFET SiC, MOSFET, 40mOhm, 1200V, TO-247-4, Industrial, Gen 3
C3M0021120K	Cree	MOSFET 1.2kV 21mOHMS G3 SiC MOSFET
C2M0080120D	CREE	SiC MOSFETs ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT

EZKEY can provide C3M0045065K recommended part comparison data and engineering samples for evaluation.