What are the key features of Infineon BSZ180P03NS3G?

This product belongs to the MOSFETs category and ships in standard packaging. It features high reliability, stable performance and low power consumption. Key parameters include wide operating range, low loss, and over-temperature protection, suitable for industrial applications. Manufactured by Infineon with full traceability.

What are the main application scenarios for BSZ180P03NS3G?

Typical applications include power management, industrial control. Additionally, it is widely used in automotive electronics, telecom infrastructure, medical devices, and consumer electronics as a critical circuit component, improving system integration and energy efficiency.

How does BSZ180P03NS3G work?

This device follows established MOSFETs design principles. Core functional stages include input handling, signal and power processing, and protection logic, ensuring stable operation under varying conditions. Refer to the datasheet for the detailed characteristics and application guidance.

What is the technical performance of BSZ180P03NS3G?

Performance highlights: stable characteristics across the operating temperature range, low loss, and long service life. Reliable contact and shock resistance, with protection against over-current and over-voltage where applicable. Meets industrial and automotive reliability standards where the series qualifies.

What is the current market demand for BSZ180P03NS3G?

The global MOSFETs market is growing at ~6-8% CAGR, with particularly strong demand in power management. Infineon BSZ180P03NS3G is a mainstream model with stable stock and a typical lead time of 2-4 weeks. Driven by new energy and smart electronics trends, inquiries for this model are steadily increasing, indicating a positive long-term outlook.

What are the technical characteristics of BSZ180P03NS3G?

Three main technical features: 1) High reliability – stable performance over the rated life; 2) Low-loss design – reduced energy loss in operation; 3) Wide adaptability – compatible with various operating conditions. Additionally, Infineon provides full technical support and reference designs.

BSZ180P03NS3G MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 by Infineon

BSZ180P03NS3G | Infineon MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3

Category: MOSFETs

Brand: Infineon

MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3

Stock: On request

Inquire Now

Product Details

PDF Datasheet

Technical Docs

Description: MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3

Technical Parameters

Continuous Drain Current (ID)	Up to 30 A class
Data Tier	Family Level
FET Type	P-Channel MOSFET
Gate Charge (Qg)	Low
Gate Threshold Voltage (VGS(th))	Logic level / standard
Input Capacitance (Ciss)	Low
Input Type	Standard
Logic Family	Standard CMOS
Mounting	Surface Mount
Mounting Type	SMD
On-Resistance (RDS(on))	Low RDS(on) class
Operating Temperature	-55 ~ +175 °C
Output Type	Push-Pull / TTL
Package / Case	PowerPAK / SMD
Power Dissipation (Pd)	High density
Product Type	Multilayer Ceramic Capacitor
Technology	OptiMOS

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

Datasheet not available online yet.

Can't find the datasheet you need? Contact our sourcing team and we'll help locate the official documentation from the manufacturer or our supply channels.

Request now →

PCB Footprint (.pcb)

3D Model (.stp)

Schematic Symbol (.sch)

DXF Drawing

BSZ180P03NS3G Application and Selection Guide

BSZ180P03NS3G Model and Manufacturer Information

BSZ180P03NS3G, a MOSFETs manufactured by Infineon: BSZ180P03NS3G helps you confirm the specific model, while Infineon helps you confirm the product source. If you are selecting a part, you can first check whether BSZ180P03NS3G meets your requirements, then check whether Infineon matches your expectations, and then refer to MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 for further evaluation.

BSZ180P03NS3G Product Parameters and Description

The main parameters of Infineon's MOSFETs product BSZ180P03NS3G include MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3. This is a MOSFETs produced by Infineon, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

BSZ180P03NS3G Application and Selection Reference

Infineon's MOSFETs product BSZ180P03NS3G has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, BSZ180P03NS3G is a MOSFETs solution worth considering, and manufacturer Infineon provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for BSZ180P03NS3G

Designers looking for BSZ180P03NS3G recommended parts can evaluate the following options. BSZ180P03NS3G selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
IPP65R045C7XKSA1	Infineon	功率场效应管, MOSFET, N通道, 650 V, 46 A, 0.04 ohm, TO
IPP034NE7N3G	INFINEON	75V,100A,N沟道功率MOSFET
BSC100N06LS3G	Infineon	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3

EZKEY can provide BSZ180P03NS3G recommended part comparison data and engineering samples for evaluation.