BSM400GA120DLC Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 by Infineon Technologies

BSM400GA120DLC | Infineon Technologies Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

Category: IGBT Modules
Brand: Infineon Technologies
Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Stock: On request

Product Details

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Description: Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

Technical Parameters

ApplicationsGeneral Purpose
Collector Current (IC)400 A
Collector-Emitter Voltage (VCE)1200 V
Configuration6-pack / single / chopper
Data TierFamily Level
Device TypeIGBT Module
IsolationIsolated baseplate
Lead FreeYes
MountingThrough Hole
Mounting TypeScrew / Bolt-on
Operating Temperature-55°C ~ +150°C
Package / Case62mm / EconoPACK
PackagingTape & Reel
Product TypeDiscrete Semiconductor
RoHSCompliant
TechnologyTrench / Field Stop
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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