BF556A,215 RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, JUNCTION FET, TO-236AB by NXP Semiconductors

BF556A,215 | NXP Semiconductors RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, JUNCTION FET, TO-236AB

Brand: NXP Semiconductors
RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, JUNCTION FET, TO-236AB
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, JUNCTION FET, TO-236AB

Technical Parameters

ApplicationRF Amplifier / Mixer
BrandNXP/Nexperia
ConfigurationSingle
Device TypeRF Bipolar Transistor
FeatureStandard
FrequencyUp to 3 GHz
Lead FreeYes
Mounting TypeSMD
Operating Temperature-55°C ~ +150°C
PackageSOT Series
PackagingTape & Reel
Product TypeDiscrete Semiconductor
RoHSCompliant
RoHS CompliantYes
TechnologySilicon RF
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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