What are the key features of NXP Semiconductors BCP52-16,115?

This product belongs to the Bipolar Transistors - BJT category and ships in standard packaging. It features high reliability, stable performance and low power consumption. Key parameters include wide operating range, low loss, and over-temperature protection, suitable for industrial applications. Manufactured by NXP Semiconductors with full traceability.

What are the main application scenarios for BCP52-16,115?

Typical applications include power management, industrial control. Additionally, it is widely used in automotive electronics, telecom infrastructure, medical devices, and consumer electronics as a critical circuit component, improving system integration and energy efficiency.

How does BCP52-16,115 work?

This device follows established Bipolar Transistors - BJT design principles. Core functional stages include input handling, signal and power processing, and protection logic, ensuring stable operation under varying conditions. Refer to the datasheet for the detailed characteristics and application guidance.

What is the technical performance of BCP52-16,115?

Performance highlights: stable characteristics across the operating temperature range, low loss, and long service life. Reliable contact and shock resistance, with protection against over-current and over-voltage where applicable. Meets industrial and automotive reliability standards where the series qualifies.

What is the current market demand for BCP52-16,115?

The global Bipolar Transistors - BJT market is growing at ~6-8% CAGR, with particularly strong demand in power management. NXP Semiconductors BCP52-16,115 is a mainstream model with stable stock and a typical lead time of 2-4 weeks. Driven by new energy and smart electronics trends, inquiries for this model are steadily increasing, indicating a positive long-term outlook.

What are the technical characteristics of BCP52-16,115?

Three main technical features: 1) High reliability – stable performance over the rated life; 2) Low-loss design – reduced energy loss in operation; 3) Wide adaptability – compatible with various operating conditions. Additionally, NXP Semiconductors provides full technical support and reference designs.

BCP52-16,115 SOT223-3晶体管类型：PNP 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：1A 功率(Pd)：650mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(sa by NXP Semiconductors

BCP52-16,115 | NXP Semiconductors SOT223-3晶体管类型：PNP 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：1A 功率(Pd)：650mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(sa

Category: Bipolar Transistors - BJT

Brand: NXP Semiconductors

SOT223-3晶体管类型：PNP 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：1A 功率(Pd)：650mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(sa

Stock: On request

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Product Details

PDF Datasheet

Technical Docs

Description: SOT223-3晶体管类型：PNP 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：1A 功率(Pd)：650mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(sa

Technical Parameters

Collector Current	1.5 A
Collector Emitter Saturation Voltage	0.5 V max
Configuration	Single
Hfe	hFE 40-250
Mounting Style	Surface Mount
Mounting Type	Surface Mount
Package Type	SOT-223
Polarity	PNP
Power Dissipation	2.2 W
Product Type	Chip Resistor
RoHS	Compliant
Temperature Range	-65 to +150 C
Thermal Resistance	Rth j-amb 62.5 K/W
Transistor Type	BJT
Transition Frequency	50 MHz
Vceo	45 V

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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BCP52-16,115 Application and Selection Guide

BCP52-16,115 Model and Manufacturer Information

BCP52-16,115, a Bipolar Transistors - BJT manufactured by NXP Semiconductors: BCP52-16,115 helps you confirm the specific model, while NXP Semiconductors helps you confirm the product source. If you are selecting a part, you can first check whether BCP52-16,115 meets your requirements, then check whether NXP Semiconductors matches your expectations, and then refer to SOT223-3晶体管类型：PNP 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：1A 功率(Pd)：650mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(sa for further evaluation.

BCP52-16,115 Product Parameters and Description

The main parameters of NXP Semiconductors's Bipolar Transistors - BJT product BCP52-16,115 include SOT223-3晶体管类型：PNP 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：1A 功率(Pd)：650mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(sa. This is a Bipolar Transistors - BJT produced by NXP Semiconductors, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

BCP52-16,115 Application and Selection Reference

NXP Semiconductors's Bipolar Transistors - BJT product BCP52-16,115 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, BCP52-16,115 is a Bipolar Transistors - BJT solution worth considering, and manufacturer NXP Semiconductors provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for BCP52-16,115

Designers looking for BCP52-16,115 recommended parts can evaluate the following options. BCP52-16,115 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
BC807-25@215	NXP Semiconductors	-
PBSS4160DS,115	NXP Semiconductors	晶体管类型：2个NPN 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：1A 功率(Pd)：560mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(sat)@Ic,
BC847C,235	NXP Semiconductors

EZKEY can provide BCP52-16,115 recommended part comparison data and engineering samples for evaluation.