BC847PNQ-7-F Bipolar Transistors - BJT General Purpose Transistor by Diodes Incorporated

BC847PNQ-7-F | Diodes Incorporated Bipolar Transistors - BJT General Purpose Transistor

Brand: Diodes Incorporated
Bipolar Transistors - BJT General Purpose Transistor
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: Bipolar Transistors - BJT General Purpose Transistor

Technical Parameters

CategoryBipolar Transistors - BJT
Collector Current100 mA
Collector Emitter Saturation Voltage0.2 V max
ConfigurationSingle
DescriptionBipolar Transistors - BJT General Purpose Transistor
Emitter Base Voltage5 V
HfehFE 100-600
ManufacturerDiodes Incorporated
Mounting StyleSurface Mount
Mounting TypeSurface Mount
Noise Figure5 dB typical
Package TypeSOT-23
PackagingReel
PolarityNPN
Power Dissipation350 mW
Standard Pack Qty3000
Temperature Range-65 to +150 C
Transistor TypeBJT
Transition Frequency300 MHz
Vceo45 V
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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