What are the key features of NXP Semiconductors BC807-40W,115?

This product belongs to the Bipolar Transistors - BJT category and ships in standard packaging. It features high reliability, stable performance and low power consumption. Key parameters include wide operating range, low loss, and over-temperature protection, suitable for industrial applications. Manufactured by NXP Semiconductors with full traceability.

What are the main application scenarios for BC807-40W,115?

Typical applications include power management, industrial control. Additionally, it is widely used in automotive electronics, telecom infrastructure, medical devices, and consumer electronics as a critical circuit component, improving system integration and energy efficiency.

How does BC807-40W,115 work?

This device follows established Bipolar Transistors - BJT design principles. Core functional stages include input handling, signal and power processing, and protection logic, ensuring stable operation under varying conditions. Refer to the datasheet for the detailed characteristics and application guidance.

What is the technical performance of BC807-40W,115?

Performance highlights: stable characteristics across the operating temperature range, low loss, and long service life. Reliable contact and shock resistance, with protection against over-current and over-voltage where applicable. Meets industrial and automotive reliability standards where the series qualifies.

What is the current market demand for BC807-40W,115?

The global Bipolar Transistors - BJT market is growing at ~6-8% CAGR, with particularly strong demand in power management. NXP Semiconductors BC807-40W,115 is a mainstream model with stable stock and a typical lead time of 2-4 weeks. Driven by new energy and smart electronics trends, inquiries for this model are steadily increasing, indicating a positive long-term outlook.

What are the technical characteristics of BC807-40W,115?

Three main technical features: 1) High reliability – stable performance over the rated life; 2) Low-loss design – reduced energy loss in operation; 3) Wide adaptability – compatible with various operating conditions. Additionally, NXP Semiconductors provides full technical support and reference designs.

BC807-40W,115 sot323晶体管类型：PNP 集射极击穿电压(Vceo)：45V 集电极电流(Ic)：500mA 功率(Pd)：200mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(s by NXP Semiconductors

BC807-40W,115 | NXP Semiconductors sot323晶体管类型：PNP 集射极击穿电压(Vceo)：45V 集电极电流(Ic)：500mA 功率(Pd)：200mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(s

Category: Bipolar Transistors - BJT

Brand: NXP Semiconductors

sot323晶体管类型：PNP 集射极击穿电压(Vceo)：45V 集电极电流(Ic)：500mA 功率(Pd)：200mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(s

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Product Details

PDF Datasheet

Technical Docs

Description: sot323晶体管类型：PNP 集射极击穿电压(Vceo)：45V 集电极电流(Ic)：500mA 功率(Pd)：200mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(s

Technical Parameters

Collector Current	500 mA
Collector Emitter Saturation Voltage	0.2 V max
Configuration	Single
Emitter Base Voltage	5 V
Hfe	hFE 400-1000
Mounting Style	Surface Mount
Mounting Type	Surface Mount
Noise Figure	5 dB typical
Package Type	SOT-23
Polarity	PNP
Power Dissipation	350 mW
Temperature Range	-65 to +150 C
Transistor Type	BJT
Transition Frequency	100 MHz
Vceo	45 V

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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BC807-40W,115 Application and Selection Guide

BC807-40W,115 Model and Manufacturer Information

BC807-40W,115, a Bipolar Transistors - BJT manufactured by NXP Semiconductors: BC807-40W,115 helps you confirm the specific model, while NXP Semiconductors helps you confirm the product source. If you are selecting a part, you can first check whether BC807-40W,115 meets your requirements, then check whether NXP Semiconductors matches your expectations, and then refer to sot323晶体管类型：PNP 集射极击穿电压(Vceo)：45V 集电极电流(Ic)：500mA 功率(Pd)：200mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(s for further evaluation.

BC807-40W,115 Product Parameters and Description

The main parameters of NXP Semiconductors's Bipolar Transistors - BJT product BC807-40W,115 include sot323晶体管类型：PNP 集射极击穿电压(Vceo)：45V 集电极电流(Ic)：500mA 功率(Pd)：200mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(s. This is a Bipolar Transistors - BJT produced by NXP Semiconductors, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

BC807-40W,115 Application and Selection Reference

NXP Semiconductors's Bipolar Transistors - BJT product BC807-40W,115 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, BC807-40W,115 is a Bipolar Transistors - BJT solution worth considering, and manufacturer NXP Semiconductors provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for BC807-40W,115

Designers looking for BC807-40W,115 recommended parts can evaluate the following options. BC807-40W,115 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
PBSS305PD	NXP Semiconductors	-
BCX55,115	NXP Semiconductors	半导体,分立半导体产品,单路
BC846BW	NXP Semiconductors	双极晶体管 - 双极结型晶体管(BJT) BJT, SOT-323, 65V, 100mA, NPN

EZKEY can provide BC807-40W,115 recommended part comparison data and engineering samples for evaluation.