BAS516,L3F DIODE GEN PURP 100V 250MA ESC by Toshiba Semiconductor and Storage

BAS516,L3F | Toshiba Semiconductor and Storage DIODE GEN PURP 100V 250MA ESC

Brand: Toshiba Semiconductor and Storage
DIODE GEN PURP 100V 250MA ESC
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: DIODE GEN PURP 100V 250MA ESC

Technical Parameters

Data TierFamily Level
Diode TypeDual Schottky barrier diode array
Lead FreeRoHS compliant
Mounting StyleSOT-23 (surface mount)
Mounting TypeSurface Mount
Operating Temperature-65 °C to +150 °C
PackagingTape & Reel
Part SeriesBAS516
PolarityStandard
Product TypeDiode
RecoverySchottky (no reverse recovery)
RoHSCompliant
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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