1N5822(SS34) IC by Toshiba Semiconductor and Storage

1N5822(SS34) | Toshiba Semiconductor and Storage IC

Brand: Toshiba Semiconductor and Storage
IC
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: IC

Technical Parameters

BrandToshiba Semiconductor and Storage
Capacitance430 pF (Typ)
Data TierFamily Level
Diode ConfigurationSingle
ECCNEAR99
Forward Current3 A
Forward Voltage0.525 V (Max)
Halogen FreeYes
Mounting TypeThrough Hole
Operating Temperature-65 to +125 C
PackagingTube
Peak Surge Current80 A
Power Dissipation3 W
Product TypeSchottky Diode
REACHCompliant
Reverse Leakage2 mA (Max)
Reverse Voltage40 V
RoHSCompliant
Series1N5822
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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