BAS21E6327HTSA1 DIODE GEN PURP 200V 250MA SOT23 by Infineon Technologies

BAS21E6327HTSA1 | Infineon Technologies DIODE GEN PURP 200V 250MA SOT23

Brand: Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: DIODE GEN PURP 200V 250MA SOT23

Technical Parameters

Data TierFamily Level
Diode TypeDual high-speed switching diode (common cathode)
Featuret_rr 4 ns, dual
Forward Current (I_F)200 mA
Forward Voltage (V_F)1.25 V
Junction Temperature Max150 °C
Lead FreeRoHS compliant
Mounting StyleSOT-23 (surface mount)
Mounting TypeSurface Mount
Operating Temperature-65 °C to +150 °C
Part SeriesBAS21
Reverse Voltage (V_R)250 V
RoHSCompliant
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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