2SB624 晶体管类型:PNP 集射极击穿电压(Vceo):25V 集电极电流(Ic):700mA 功率(Pd):200mW 集电极截止电流(Icbo):100nA by CJ

2SB624 | CJ 晶体管类型:PNP 集射极击穿电压(Vceo):25V 集电极电流(Ic):700mA 功率(Pd):200mW 集电极截止电流(Icbo):100nA

Brand: CJ
晶体管类型:PNP 集射极击穿电压(Vceo):25V 集电极电流(Ic):700mA 功率(Pd):200mW 集电极截止电流(Icbo):100nA
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: 晶体管类型:PNP 集射极击穿电压(Vceo):25V 集电极电流(Ic):700mA 功率(Pd):200mW 集电极截止电流(Icbo):100nA

Technical Parameters

BrandCJ (Changjiang)
Data TierGeneral Description
Mounting TypeSMD / Through Hole
Product TypeDiscrete Semiconductor
RoHSCompliant
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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