2SA1013-O,T6MIBF(J TRANS PNP 1A 160V TO226-3 by Toshiba Semiconductor and Storage

2SA1013-O,T6MIBF(J | Toshiba Semiconductor and Storage TRANS PNP 1A 160V TO226-3

Name: 2SA1013-O,T6MIBF(J
Brand: Toshiba Semiconductor and Storage
SKU: 2SA1013-O,T6MIBF(J

Category: Bipolar Transistors - BJT

Brand: Toshiba Semiconductor and Storage

TRANS PNP 1A 160V TO226-3

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Product Details

PDF Datasheet

Technical Docs

Description: TRANS PNP 1A 160V TO226-3

Technical Parameters

Brand	Toshiba
Data Tier	General Description
Mounting Type	Through Hole / SMD
Operating Temperature	-55 to +150 C
Product Type	BJT Transistor
RoHS	Compliant

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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PCB Footprint (.pcb)

3D Model (.stp)

Schematic Symbol (.sch)

DXF Drawing

2SA1013-O,T6MIBF(J Application and Selection Guide

2SA1013-O,T6MIBF(J Model and Manufacturer Information

2SA1013-O,T6MIBF(J, a Bipolar Transistors - BJT manufactured by Toshiba: 2SA1013-O,T6MIBF(J helps you confirm the specific model, while Toshiba helps you confirm the product source. If you are selecting a part, you can first check whether 2SA1013-O,T6MIBF(J meets your requirements, then check whether Toshiba matches your expectations, and then refer to TRANS PNP 1A 160V TO226-3 for further evaluation.

2SA1013-O,T6MIBF(J Product Parameters and Description

The main parameters of Toshiba's Bipolar Transistors - BJT product 2SA1013-O,T6MIBF(J include TRANS PNP 1A 160V TO226-3. This is a Bipolar Transistors - BJT produced by Toshiba, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

2SA1013-O,T6MIBF(J Application and Selection Reference

Toshiba's Bipolar Transistors - BJT product 2SA1013-O,T6MIBF(J has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, 2SA1013-O,T6MIBF(J is a Bipolar Transistors - BJT solution worth considering, and manufacturer Toshiba provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for 2SA1013-O,T6MIBF(J

Designers looking for 2SA1013-O,T6MIBF(J recommended parts can evaluate the following options. 2SA1013-O,T6MIBF(J selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
2SA1586-GR(TE85L,F)	Toshiba Semiconductor and Storage	Trans GP BJT PNP 50V 0.15A 3-Pin USM T/R - Tape and Reel (Alt: 2SA1586-GR(TE85L,F)
2SC2120-Y	Toshiba Semiconductor and Storage	TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),TO-92
2SA1015-Y(TE2,T)	Toshiba Semiconductor and Storage	150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

EZKEY can provide 2SA1013-O,T6MIBF(J recommended part comparison data and engineering samples for evaluation.