2N3440  单双极晶体管 (BJT), 高压平面, NPN, 250 V, 1.2 W, 800 mA, TO by STMicroelectronics

2N3440 | STMicroelectronics 单双极晶体管 (BJT), 高压平面, NPN, 250 V, 1.2 W, 800 mA, TO

Brand: STMicroelectronics
单双极晶体管 (BJT), 高压平面, NPN, 250 V, 1.2 W, 800 mA, TO
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: 单双极晶体管 (BJT), 高压平面, NPN, 250 V, 1.2 W, 800 mA, TO

Technical Parameters

Mounting TypeThrough Hole / SMD
Operating Temperature-55 to +150 C
Package / CaseTO-92 / SOT-23
RoHSCompliant
Transistor TypeBJT Transistor
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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