2MBI1200VT-170E Insulated Gate Bipolar Transistor by Fuji Electric Co Ltd

2MBI1200VT-170E | Fuji Electric Co Ltd Insulated Gate Bipolar Transistor

Category: IGBT Modules
Brand: Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: Insulated Gate Bipolar Transistor

Technical Parameters

Current RatingSee datasheet
Device TypeIGBT Module
Mounting TypeModule
Operating Temperature-40 to +150 C
RoHSCompliant
Voltage Rating600 V
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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