UT2305G-AE3-R Power Field-Effect Transistor, 4.2A I(D), 20V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET by Unisonic Technologies Co., Ltd.

UT2305G-AE3-R | Unisonic Technologies Co., Ltd. Power Field-Effect Transistor, 4.2A I(D), 20V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Name: UT2305G-AE3-R
Brand: Unisonic Technologies Co., Ltd.
SKU: UT2305G-AE3-R

Category: General Purpose

Brand: Unisonic Technologies Co., Ltd.

Power Field-Effect Transistor, 4.2A I(D), 20V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Stock: On request

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Product Details

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Technical Docs

Description: Power Field-Effect Transistor, 4.2A I(D), 20V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Technical Parameters

Application	General Purpose
Brand	Unisonic Technologies Co., Ltd.
Data Tier	General Description
ECCN	EAR99
Halogen Free	Yes
Lead Free	Yes
Packaging	Tape & Reel
Product Type	Electronic Component
REACH	Compliant
RoHS	Compliant

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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3D Model (.stp)

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UT2305G-AE3-R Application and Selection Guide

UT2305G-AE3-R Model and Manufacturer Information

UT2305G-AE3-R, a General Purpose manufactured by Unisonic Technologies Co., Ltd.: UT2305G-AE3-R helps you confirm the specific model, while Unisonic Technologies Co., Ltd. helps you confirm the product source. If you are selecting a part, you can first check whether UT2305G-AE3-R meets your requirements, then check whether Unisonic Technologies Co., Ltd. matches your expectations, and then refer to Power Field-Effect Transistor, 4.2A I(D), 20V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET for further evaluation.

UT2305G-AE3-R Product Parameters and Description

The main parameters of Unisonic Technologies Co., Ltd.'s General Purpose product UT2305G-AE3-R include Power Field-Effect Transistor, 4.2A I(D), 20V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET. This is a General Purpose produced by Unisonic Technologies Co., Ltd., and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

UT2305G-AE3-R Application and Selection Reference

Unisonic Technologies Co., Ltd.'s General Purpose product UT2305G-AE3-R has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, UT2305G-AE3-R is a General Purpose solution worth considering, and manufacturer Unisonic Technologies Co., Ltd. provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for UT2305G-AE3-R

Designers looking for UT2305G-AE3-R recommended parts can evaluate the following options. UT2305G-AE3-R selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

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EZKEY can provide UT2305G-AE3-R recommended part comparison data and engineering samples for evaluation.