T1G4020036-FS | Qorvo RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ANTIMONY, HALOGEN, PFOS, SVHC, TBBP-A FREE AND ROHS COMPLIANT PACKAGE-4
Category:
General Purpose
Brand:
Qorvo
RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ANTIMONY, HALOGEN, PFOS, SVHC, TBBP-A FREE AND ROHS COMPLIANT PACKAGE-4
Stock:
On request
Product Details
PDF Datasheet
Technical Docs
Description: RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ANTIMONY, HALOGEN, PFOS, SVHC, TBBP-A FREE AND ROHS COMPLIANT PACKAGE-4
Technical Parameters
| Application | General Purpose |
| Brand | Qorvo |
| Data Tier | General Description |
| ECCN | EAR99 |
| Halogen Free | Yes |
| Lead Free | Yes |
| Packaging | Tape & Reel |
| Product Type | Electronic Component |
| REACH | Compliant |
| RoHS | Compliant |
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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