SI3993DV-T1-E3 SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.8A I(D), 30V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET by Vishay Dale

SI3993DV-T1-E3 | Vishay Dale SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.8A I(D), 30V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Name: SI3993DV-T1-E3
Brand: Vishay Dale
SKU: SI3993DV-T1-E3

Category: MOSFETs

Brand: Vishay Dale

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.8A I(D), 30V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

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Description: SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.8A I(D), 30V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Technical Parameters

Application	Power Switching
Brand	Vishay Dale
Channel	N-Channel
Data Tier	Family Level
Mounting Type	Surface Mount
Operating Temperature	-55 to +150 C
Packaging	Tape & Reel
Product Type	MOSFET
RoHS	Compliant
Series	SI3

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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SI3993DV-T1-E3 Application and Selection Guide

SI3993DV-T1-E3 Model and Manufacturer Information

SI3993DV-T1-E3, a MOSFETs manufactured by Vishay Dale: SI3993DV-T1-E3 helps you confirm the specific model, while Vishay Dale helps you confirm the product source. If you are selecting a part, you can first check whether SI3993DV-T1-E3 meets your requirements, then check whether Vishay Dale matches your expectations, and then refer to SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.8A I(D), 30V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET for further evaluation.

SI3993DV-T1-E3 Product Parameters and Description

The main parameters of Vishay Dale's MOSFETs product SI3993DV-T1-E3 include SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.8A I(D), 30V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET. This is a MOSFETs produced by Vishay Dale, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

SI3993DV-T1-E3 Application and Selection Reference

Vishay Dale's MOSFETs product SI3993DV-T1-E3 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, SI3993DV-T1-E3 is a MOSFETs solution worth considering, and manufacturer Vishay Dale provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for SI3993DV-T1-E3

Designers looking for SI3993DV-T1-E3 recommended parts can evaluate the following options. SI3993DV-T1-E3 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
SI1056X-T1-E3	Vishay Dale	MOSFET N-CH 20V 1.32A SC89-6
SQ2301ES-T1_GE3	Vishay Dale	MOSFETs P-Channel 20V AEC-Q101 Qualified
SIR474DP-T1-GE3	Vishay Dale	表面贴装型 N 通道 30 V 20A（Tc） 3.9W（Ta），29.8W（Tc） PowerPAK® SO-8

EZKEY can provide SI3993DV-T1-E3 recommended part comparison data and engineering samples for evaluation.