PSMN022-30PL POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 30V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB by NXP Semiconductors

PSMN022-30PL | NXP Semiconductors POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 30V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB

Category: General Purpose Semiconductors
Brand: NXP Semiconductors
POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 30V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
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Product Details

PDF Datasheet

Technical Docs

Description: POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 30V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB

Technical Parameters

ApplicationGeneral Purpose
BrandNXP Semiconductors
Data TierGeneral Description
Lead FreeYes
Mounting TypeSurface Mount
Operating Temperature-40 to +125 C
PackagingTape & Reel
Product TypeSemiconductor Component
RoHSCompliant
SeriesNXP
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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