PBSS4160DS,115 | NXP Semiconductors 晶体管类型：2个NPN 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：1A 功率(Pd)：560mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(sat)@Ic,
Category:
Bipolar Transistors - BJT
Brand:
NXP Semiconductors
晶体管类型：2个NPN 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：1A 功率(Pd)：560mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(sat)@Ic,
Stock:
On request
Product Details
PDF Datasheet
Technical Docs
Description: 晶体管类型：2个NPN 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：1A 功率(Pd)：560mW 集电极截止电流(Icbo)：100nA 集电极-发射极饱和电压(VCE(sat)@Ic,
Technical Parameters
| Application | General Purpose |
| Brand | NXP Semiconductors |
| Current Rating | 1 A |
| Data Tier | Family Level |
| Mounting Type | Surface Mount |
| Operating Temperature | -55 to +150 C |
| Package | SOT-89 |
| Product Type | Bipolar Transistor (NPN) |
| RoHS | Compliant |
| Series | PBSS41 |
| Voltage Rating | 80 V |
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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