IRLMS6802PBF Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 by Infineon Technologies

IRLMS6802PBF | Infineon Technologies Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6

Name: IRLMS6802PBF
Brand: Infineon Technologies
SKU: IRLMS6802PBF

Category: MOSFETs

Brand: Infineon Technologies

Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6

Stock: On request

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Product Details

PDF Datasheet

Technical Docs

Description: Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6

Technical Parameters

Application	Power Switching
Brand	Infineon Technologies
Channel	N-Channel
Data Tier	Family Level
Mounting Type	Surface Mount
Operating Temperature	-55 to +175 C
Packaging	Tape & Reel
Product Type	MOSFET
Qualification	Standard
RoHS	Compliant
Series	IR / AUIR

Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.

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3D Model (.stp)

Schematic Symbol (.sch)

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IRLMS6802PBF Application and Selection Guide

IRLMS6802PBF Model and Manufacturer Information

IRLMS6802PBF, a MOSFETs manufactured by Infineon Technologies: IRLMS6802PBF helps you confirm the specific model, while Infineon Technologies helps you confirm the product source. If you are selecting a part, you can first check whether IRLMS6802PBF meets your requirements, then check whether Infineon Technologies matches your expectations, and then refer to Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 for further evaluation.

IRLMS6802PBF Product Parameters and Description

The main parameters of Infineon Technologies's MOSFETs product IRLMS6802PBF include Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6. This is a MOSFETs produced by Infineon Technologies, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

IRLMS6802PBF Application and Selection Reference

Infineon Technologies's MOSFETs product IRLMS6802PBF has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, IRLMS6802PBF is a MOSFETs solution worth considering, and manufacturer Infineon Technologies provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for IRLMS6802PBF

Designers looking for IRLMS6802PBF recommended parts can evaluate the following options. IRLMS6802PBF selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

Recommended Part	Brand	Description
IPP110N20N3 G	Infineon Technologies	MOSFET N-CH 200V 88A TO220-3
IPA60R125C6	Infineon Technologies	MOSFET N-CH 600V 30A TO220-FP
IPP100N04S4-H2	INFINEON TECHNOLOGIES	null

EZKEY can provide IRLMS6802PBF recommended part comparison data and engineering samples for evaluation.