IPT60R102G7XTMA2 | Infineon Technologies Power Field-Effect Transistor, 600V, 0.102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
Category:
General Purpose Semiconductors
Brand:
Infineon Technologies
Power Field-Effect Transistor, 600V, 0.102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
Stock:
On request
Product Details
PDF Datasheet
Technical Docs
Description: Power Field-Effect Transistor, 600V, 0.102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
Technical Parameters
| Application | General Purpose |
| Brand | Infineon Technologies |
| Data Tier | General Description |
| Lead Free | Yes |
| Mounting Type | Surface Mount |
| Operating Temperature | -40 to +150 C |
| Packaging | Tape & Reel |
| Product Type | Semiconductor Component |
| RoHS | Compliant |
| Series | Infineon |
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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