FQD2N100TM | Fairchild Semiconductor POWER FIELD-EFFECT TRANSISTOR, 1.6A I(D), 1000V, 9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252
Brand:
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1.6A I(D), 1000V, 9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252
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On request
Product Details
PDF Datasheet
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Description: POWER FIELD-EFFECT TRANSISTOR, 1.6A I(D), 1000V, 9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252
Technical Parameters
Detailed specifications for this model are being verified. Submit an inquiry to receive the full datasheet and specifications.
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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