DE150-102N02A | IXYS RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 6 PIN
Category:
Power Semiconductors
Brand:
IXYS
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 6 PIN
Stock:
On request
Product Details
PDF Datasheet
Technical Docs
Description: RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 6 PIN
Technical Parameters
| Applications | General Purpose |
| Brand | IXYS |
| Configuration | Single |
| Data Tier | Family Level |
| Lead Free | Yes |
| Mounting Type | Through Hole |
| Number of Terminals | 3 |
| Operating Temperature | -55 to +175 C |
| Package | SOT-23 |
| Package / Case | Through Hole |
| Packaging | Tape & Reel |
| Product Type | Power MOSFET / Diode |
| RoHS | Compliant |
| Technology | N-Channel |
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
Datasheet not available online yet.
Can't find the datasheet you need? Contact our sourcing team and we'll help locate the official documentation from the manufacturer or our supply channels.
Request now →
