CGHV96100F2 RF Power Field-Effect Transistor, by Cree

CGHV96100F2 | Cree RF Power Field-Effect Transistor,

Brand: Cree
RF Power Field-Effect Transistor,
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: RF Power Field-Effect Transistor,

Technical Parameters

BrandCree/Wolfspeed
Drain Efficiency60~70%
Frequency RangeDC to 6 GHz
Operating Temperature-30~150°C
Output Power5~100 W
PackageN/Hermetic
Power Gain15~20 dB
RoHSCompliant
Supply Voltage28 V
TechnologyGaN on SiC
TypeRF Power Transistor
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
Datasheet not available online yet.
Can't find the datasheet you need? Contact our sourcing team and we'll help locate the official documentation from the manufacturer or our supply channels.
Request now →