CGH40010F 射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-6.0GHz, 10 Watt by Cree Inc

CGH40010F | Cree Inc 射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-6.0GHz, 10 Watt

Brand: Cree Inc
射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-6.0GHz, 10 Watt
Stock: On request

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Description: 射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-6.0GHz, 10 Watt

Technical Parameters

BrandCree/Wolfspeed
Drain Efficiency60~70%
Frequency RangeDC to 6 GHz
Operating Temperature-30~150°C
Output Power5~100 W
PackageN/Hermetic
Power Gain15~20 dB
RoHSCompliant
Supply Voltage28 V
TechnologyGaN on SiC
TypeRF Power Transistor
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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