BYM10-800-E3/96 DIODE GEN PURP 800V 1A DO213AB by Vishay Semiconductor Diodes Division

BYM10-800-E3/96 | Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1A DO213AB

Category: Rectifiers
Brand: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1A DO213AB
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: DIODE GEN PURP 800V 1A DO213AB

Technical Parameters

Average Rectified Current (Io)1 A
ConfigurationSingle
Data TierFamily Level
Diode TypeRectifier
Mounting TypeSurface Mount
Operating Junction Temp-65 to 150 °C
Operating Temperature-55°C ~ +150°C
Package / CaseDO-214AC (SMA)
PackagingTape & Reel
Peak Forward Current (Ifsm)60 A
PolarityStandard
Product TypeDiode
Reverse Recovery Time (trr)50 ns
Reverse Voltage (VRRM)800 V
RoHSCompliant
TechnologySilicon
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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