BSZ12DN20NS3G MOSFET N-CH 200V 11.3A 8TSDSON by Infineon Technologies

BSZ12DN20NS3G | Infineon Technologies MOSFET N-CH 200V 11.3A 8TSDSON

Category: MOSFETs
Brand: Infineon Technologies
MOSFET N-CH 200V 11.3A 8TSDSON
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: MOSFET N-CH 200V 11.3A 8TSDSON

Technical Parameters

Continuous Drain Current (ID)Up to 30 A class
Data TierFamily Level
Drain-Source Voltage (VDS)20 V
FET TypeN-Channel MOSFET
Gate Charge (Qg)Low
Gate Threshold Voltage (VGS(th))Logic level / standard
Input Capacitance (Ciss)Low
Logic FamilyStandard CMOS
MountingSurface Mount
Mounting TypeSMD
On-Resistance (RDS(on))Low RDS(on) class
Operating Temperature-55 ~ +175 °C
Output TypePush-Pull / TTL
Package / CasePowerPAK / SMD
Power Dissipation (Pd)High density
Product TypeMultilayer Ceramic Capacitor
TechnologyOptiMOS
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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