BSZ021N04LS6 | Infineon Technologies Power Field-Effect Transistor,
Category:
MOSFETs
Brand:
Infineon Technologies
Power Field-Effect Transistor,
Stock:
On request
Product Details
PDF Datasheet
Technical Docs
Description: Power Field-Effect Transistor,
Technical Parameters
| Continuous Drain Current (ID) | Up to 30 A class |
| Data Tier | Family Level |
| FET Type | N-Channel MOSFET |
| Gate Charge (Qg) | Low |
| Gate Threshold Voltage (VGS(th)) | Logic level / standard |
| Input Capacitance (Ciss) | Low |
| Input Type | Standard |
| Logic Family | Standard CMOS |
| Mounting | Surface Mount |
| Mounting Type | SMD |
| On-Resistance (RDS(on)) | Low RDS(on) class |
| Operating Temperature | -55 ~ +175 °C |
| Output Type | Push-Pull / TTL |
| Package / Case | PG-TDSON-8 (DSON) |
| Power Dissipation (Pd) | High density |
| Product Type | Multilayer Ceramic Capacitor |
| Technology | OptiMOS |
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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