BSS84DW-7-F 双P沟道增强型MOSFET VDS=50V VGS=±20V ID=130mA RDS(ON)=10Ω SOT363 by Diodes Inc

BSS84DW-7-F | Diodes Inc 双P沟道增强型MOSFET VDS=50V VGS=±20V ID=130mA RDS(ON)=10Ω SOT363

Category: MOSFETs
Brand: Diodes Inc
双P沟道增强型MOSFET VDS=50V VGS=±20V ID=130mA RDS(ON)=10Ω SOT363
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Product Details

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Description: 双P沟道增强型MOSFET VDS=50V VGS=±20V ID=130mA RDS(ON)=10Ω SOT363

Technical Parameters

ApplicationsGeneral Purpose
ConfigurationSingle
Continuous Drain Current (ID)100 mA ~ 500 mA
Data TierFamily Level
FET TypeP-Channel MOSFET
Gate Charge (Qg)Low
Gate Threshold Voltage (VGS(th))1.5 ~ 2.5 V
Input Capacitance (Ciss)Low
Lead FreeYes
MountingSurface Mount
Mounting TypeSMD
Operating Temperature-55 ~ +150 °C
Package / CaseSOT-23
PackagingTape & Reel
Product TypeMultilayer Ceramic Capacitor
RoHSCompliant
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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