BSP296L6327 100V,1.1A,N沟道功率MOSFET by Infineon Technologies

BSP296L6327 | Infineon Technologies 100V,1.1A,N沟道功率MOSFET

Category: MOSFETs
Brand: Infineon Technologies
100V,1.1A,N沟道功率MOSFET
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: 100V,1.1A,N沟道功率MOSFET

Technical Parameters

ApplicationsGeneral Purpose
ConfigurationSingle
Continuous Drain Current (ID)100 mA ~ 500 mA
Data TierFamily Level
FET TypeN/P-channel small signal MOSFET
Gate Charge (Qg)Low
Gate Threshold Voltage (VGS(th))1.5 ~ 2.5 V
Input Capacitance (Ciss)Low
Lead FreeYes
MountingSurface Mount
Mounting TypeSMD
Operating Temperature-55 ~ +150 °C
Package / CaseSOT-23
PackagingTape & Reel
Product TypeMultilayer Ceramic Capacitor
RoHSCompliant
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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